BSZ023N04LSATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

BSZ023N04LSATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N-channel 40 V 22A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8-FL

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	22A (Ta), 40A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	2.35 milliohms @ 20A, 10V
Vgs(th) (max) at Id	2V @ 250μA
Gate Charge?(Qg) (max) at Vgs	37 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	2630 pF @ 20 V
FET function	-
Power dissipation (max)	2.1W (Ta), 69W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TSDSON-8-FL
Package/case	8-PowerTDFN

IPI65R310CFDXKSA1

Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
IPI65R380C6XKSA1

Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
IPI65R420CFDXKSA1

Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
IPI65R600C6XKSA1

Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3
IPI70R950CEXKSA1

Transistor: N-MOSFET; unipolar; 700V; 4.7A; 68W; PG-TO262-3
IPI80N06S407AKSA2

Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 58A; Idm: 320A
IPP60R099P6XKSA1

Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
IPP60R099P7

Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3