LOGO
LOGO
IRFZ46NPBF Image

img for reference only

Mfr. #:
IRFZ46NPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
N-channel, 55V, 53A, 16.5mΩ@V
Datasheet:
In Stock:
51
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 55V
Continuous Drain Current (Id) 53A
Power (Pd) 107W
On-resistance (RDS(on)@Vgs,Id) 16.5mΩ@10V,28A
Threshold Voltage (Vgs(th)@Id) 4V@250uA
Related models
  • BC 818K-25 E6327

    Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 170MHz 500 mW Surface Mount PG-SOT23

  • BC847BWE6433HTMA1

    Transistor - Bipolar (BJT) - Single NPN 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

  • BCW 66KG E6433

    Transistor - Bipolar (BJT) - Single NPN 45 V 800 mA 170MHz 500 mW Surface Mount PG-SOT23

  • BCR135E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23

  • BCR141E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SOT23

  • BCR162E6327HTSA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

  • BCR166E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23

  • BCR169E6327HTSA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd