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IPD18DP10LMATMA1 Image

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Mfr. #:
IPD18DP10LMATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 2.5A; 13.9A
Power (Pd) 3W; 83W
On-resistance (RDS(on)@Vgs,Id) 178mΩ@13A,10V
Threshold Voltage (Vgs(th)@Id) 2V@1.04mA
Gate Charge (Qg@Vgs) 42nC@10V
Input Capacitance (Ciss@Vds) 2.1nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
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