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IPB60R045P7ATMA1 Image

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Mfr. #:
IPB60R045P7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 600V
Continuous Drain Current (Id) 61A
Power (Pd) 201W
On-resistance (RDS(on)@Vgs,Id) 45mΩ@22.5A,10V
Threshold Voltage (Vgs(th)@Id) 4V@1.08mA
Gate Charge (Qg@Vgs) 90nC@10V
Input Capacitance (Ciss@Vds) 3.891nF@400V
Operating Temperature -55℃~ 150℃@(Tj)
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