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IRF7821GTRPBF Image

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Mfr. #:
IRF7821GTRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 30 V 13.6A (Ta) 2.5W (Ta) 8-SO
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 13.6A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) @ Id, Vgs 9.1 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge?(Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1010 pF @ 15 V
FET function -
Power dissipation (max) 2.5W (Ta)
Operating temperature -55°C ~ 155°C (TJ)
Mounting type Surface mount
Supplier device package 8-SO
Package/case 8-SOIC (0.154", 3.90mm width)
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