LOGO
LOGO
IPW60R180P7XKSA1 Image

img for reference only

Mfr. #:
IPW60R180P7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolMOS? P7
Polarization Unipolar
Drain-source voltage 600V
Drain current 11A
Power consumption 72W
Package PG-TO247-3
Gate-source voltage ±20V
On-state resistance 0.18Ω
Mounting method THT
Gate charge 25nC
Package type Tube
Channel type Enhancement
Semiconductor device characteristics ESD protected gate
Related models
  • BC 818K-25 E6327

    Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 170MHz 500 mW Surface Mount PG-SOT23

  • BC847BWE6433HTMA1

    Transistor - Bipolar (BJT) - Single NPN 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

  • BCW 66KG E6433

    Transistor - Bipolar (BJT) - Single NPN 45 V 800 mA 170MHz 500 mW Surface Mount PG-SOT23

  • BCR135E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23

  • BCR141E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SOT23

  • BCR162E6327HTSA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

  • BCR166E6433HTMA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23

  • BCR169E6327HTSA1

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd