LOGO
LOGO
IPD60R360PFD7SAUMA1 Image

img for reference only

Mfr. #:
IPD60R360PFD7SAUMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; CoolMOS? PFD7; unipolar; 600V; 6A; Idm: 24A
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolMOS? PFD7
Polarization Unipolar
Drain-source voltage 600V
Drain current 6A
Pulsed drain current 24A
Power consumption 43W
Package PG-TO252-3
Gate-source voltage ±20V
On-state resistance 715mΩ
Mounting method SMD
Channel type Enhanced
Semiconductor device characteristics ESD protected gate
Related models
  • IRF3708

    Through hole N channel 30 V 62A (Tc) 87W (Tc) TO-220AB

  • IRL1004STRR

    Surface Mount N Channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) D2PAK

  • IRL1104STRL

    Surface Mount N Channel 40 V 104A (Tc) 2.4W (Ta), 167W (Tc) D2PAK

  • IRL1104STRR

    Surface Mount N Channel 40 V 104A (Tc) 2.4W (Ta), 167W (Tc) D2PAK

  • IRF3708S

    Surface Mount N Channel 30 V 62A (Tc) 87W (Tc) D2PAK

  • IRF3708STRL

    Surface Mount N Channel 30 V 62A (Tc) 87W (Tc) D2PAK

  • IRF3708STRR

    Surface Mount N Channel 30 V 62A (Tc) 87W (Tc) D2PAK

  • IRF4905STRR

    Surface Mount Type P Channel 55 V 74A (Tc) 3.8W (Ta), 200W (Tc) D2PAK

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd