LOGO
LOGO
IMW120R090M1HXKSA1 Image

img for reference only

Mfr. #:
IMW120R090M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Technology CoolSiC?, SiC
Polarization Unipolar
Drain-source voltage 1.2kV
Drain current 18A
Pulsed drain current 50A
Power consumption 58W
Package TO247
Gate-source voltage -7...23V
On-state resistance 170mΩ
Mounting method THT
Packaging type Tube
Channel type Enhancement
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd