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IRF6662TR1PBF Image

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Mfr. #:
IRF6662TR1PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 100 V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) DIRECTFET? MZ
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 8.3A (Ta), 47A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 22 mOhm @ 8.2A, 10V
Vgs(th) (max) at Id 4.9V @ 100μA
Gate Charge?(Qg) (max) at Vgs 31 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1360 pF @ 25 V
FET function -
Power dissipation (max) 2.8W (Ta), 89W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package DIRECTFET? MZ
Package/case DirectFET? Isocapacitive MZ
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