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IRLU3705Z Image

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Mfr. #:
IRLU3705Z
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 55 V 42A (Tc) 130W (Tc) I-PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 42A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 8 milliohms @ 42A, 10V
Vgs(th) (max) at Id 3V @ 250μA
Gate Charge?(Qg) (max) at Vgs 66 nC @ 5 V
Vgs (max) ±16V
Various Vds Input Capacitance (Ciss) (max) 2900 pF @ 25 V
FET Function -
Power Dissipation (max) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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