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SPD02N60C3BTMA1 Image

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Mfr. #:
SPD02N60C3BTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 1.8A (Tc) 25W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 1.8 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 3 Ohms @ 1.1A, 10 V
Vgs(th) (max) at Id 3.9 V @ 80 μA
Gate Charge?(Qg) (max) at Vgs 12.5 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 200 pF @ 25 V
FET Function -
Power Dissipation (max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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