LOGO
LOGO
IPP65R125C7XKSA1 Image

img for reference only

Mfr. #:
IPP65R125C7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 650V
Continuous Drain Current (Id) 18A
Power (Pd) 101W
On-resistance (RDS(on)@Vgs,Id) 125mΩ@8.9A,10V
Threshold Voltage (Vgs(th)@Id) 4V@440uA
Gate Charge (Qg@Vgs) 35nC@10V
Input Capacitance (Ciss@Vds) 1.67nF@400V
Operating Temperature -55℃~ 150℃@(Tj)
Related models
  • SN7002N E6327

    Surface mount N channel 60 V 200mA (Ta) 360mW (Ta) PG-SOT23

  • SPP80N10L

    Through hole N channel 100 V 80A (Tc) 250W (Tc) PG-TO220-3-1

  • SPU01N60C3BKMA1

    Through hole N channel 650 V 800mA (Tc) 11W (Tc) PG-TO251-3-21

  • IPP21N03L G

    Through hole N channel PG-TO220-3

  • IPP25N06S325XK

    Through hole N channel 55 V 25A (Tc) 48W (Tc) PG-TO220-3-1

  • IPP25N06S3L-22

    Through hole N channel 55 V 25A (Tc) 50W (Tc) PG-TO220-3-1

  • IPP26CN10NGHKSA1

    Through hole N channel 100 V 35A (Tc) 71W (Tc) PG-TO220-3

  • IPP26CNE8N G

    Through hole N channel 85 V 35A (Tc) 71W (Tc) PG-TO220-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd