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IPA80R650CEXKSA2 Image

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Mfr. #:
IPA80R650CEXKSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 800 V 8A (Ta) 33W (Tc) TO-220-3F
Datasheet:
In Stock:
359
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 8A (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 650 mOhm @ 5.1A, 10V
Vgs(th) (max) at Id 3.9V @ 470μA
Gate Charge?(Qg) (max) at Vgs 45 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1100 pF @ 100 V
FET Function -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3F
Package/Case TO-220-3 Full Package
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