IPA50R190CEXKSA2 Infineon | Infineon agency

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Mfr. #：

IPA50R190CEXKSA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 500 V 18.5A (Tc) 32W (Tc) PG-TO220-FP

Datasheet:

In Stock:

731

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? CE
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	500 V
Current at 25°C - Continuous Drain (Id)	18.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	13V
On-Resistance (max) at Id, Vgs	190 mOhm @ 6.2A, 13V
Vgs(th) (max) at Id	3.5V @ 510μA
Gate Charge?(Qg) (max) at Vgs	47.2 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1137 pF @ 100 V
FET function	-
Power dissipation (max)	32W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-FP
Package/case	TO-220-3 Complete package

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