SPD09P06PLGBTMA1 Infineon | Infineon agency

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Mfr. #：

SPD09P06PLGBTMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 60 V 9.7A (Tc) 42W (Tc) PG-TO252-3

Datasheet:

In Stock:

8965

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Packaging	Tape and Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	9.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) at Id, Vgs	250 milliohms @ 6.8A, 10V
Vgs(th) (Max) at Id	2V @ 250μA
Gate Charge?(Qg) (Max) at Vgs	21 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	450 pF @ 25 V
FET function	-
Power dissipation (max)	42W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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