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BSM35GD120DN2E3224BPSA1 Image

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Mfr. #:
BSM35GD120DN2E3224BPSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT MODULE LOW POWER ECONO
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Full Bridge
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 2.7 V
Continuous Collector Current at 25 C 50 A
Gate-Emitter Leakage Current 150 nA
Pd-Power Dissipation 280 W
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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