IRFS4227PBF Infineon | Infineon agency

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Mfr. #：

IRFS4227PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface Mount N Channel 200 V 62A (Tc) 330W (Tc) D2PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	62A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	26 mOhm @ 46A, 10V
Vgs(th) (max) at Id	5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	98 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (max)	4600 pF @ 25 V
FET Function	-
Power Dissipation (max)	330W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

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