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IPF050N10NF2SATMA1 Image

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Mfr. #:
IPF050N10NF2SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 3.8W (Ta), 150W (Tc) PG-TO263-7
Datasheet:
In Stock:
1321
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series StrongIRFET? 2
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 19A (Ta), 117A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 5.05mOhm @ 60A, 10V
Vgs(th) (max) at Id 3.8V @ 84μA
Gate Charge?(Qg) (max) at Vgs 76 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 3600 pF @ 50 V
FET function -
Power dissipation (max) 3.8W (Ta), 150W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-7
Package/case TO-263-7, D2Pak (6-lead tab)
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