IPF050N10NF2SATMA1 Infineon | Infineon agency

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Mfr. #：

IPF050N10NF2SATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 100 V 3.8W (Ta), 150W (Tc) PG-TO263-7

Datasheet:

In Stock:

1321

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	StrongIRFET? 2
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	19A (Ta), 117A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	5.05mOhm @ 60A, 10V
Vgs(th) (max) at Id	3.8V @ 84μA
Gate Charge?(Qg) (max) at Vgs	76 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	3600 pF @ 50 V
FET function	-
Power dissipation (max)	3.8W (Ta), 150W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO263-7
Package/case	TO-263-7, D2Pak (6-lead tab)

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